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A 0.13-µm CMOS Ultra-Wideband Low-Noise Amplifier with High Impedance n-Well Terminals
Chang-Wan KIM Bong-Soon KANG
IEICE TRANSACTIONS on Electronics
Publication Date: 2010/10/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: Microwaves, Millimeter-Waves
CMOS, low noise amplifier, noise figure, wideband,
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A resistive feedback-based inductive source degeneration ultra-wideband (UWB) CMOS low noise amplifier (LNA) with floating n-well terminals has been proposed. The resistive feedback technique provides wideband input matching with a small amount of noise degradation by reducing the quality factor of the input resonant circuit. In addition, all n-wells terminals of the triple-well RF transistors are connected to the supply voltage through high value resistors in order to reduce unwanted parasitic capacitances, leading to improvement of the RF performance of the proposed LNA. The proposed UWB LNA is implemented in 0.13 µm CMOS technology and all inductors are fully integrated in this work. Measurement results show a power gain of 10 dB from 3 GHz to 6 GHz, a minimum (maximum) noise figure of 2.3 dB (3.8 dB), an input return loss of better than -8 dB, and an input referred IP3 of -7 dBm. The fabricated chip consumes only 5 mA from a 1.5 V supply voltage.