Properties of SiO2 Surface and Pentacene OTFT Subjected to Atomic Hydrogen Annealing

Akira HEYA
Naoto MATSUO

Publication
IEICE TRANSACTIONS on Electronics   Vol.E93-C    No.10    pp.1516-1517
Publication Date: 2010/10/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E93.C.1516
Print ISSN: 0916-8516
Type of Manuscript: BRIEF PAPER
Category: 
Keyword: 
pentacene,  organic thin-film transistors,  atomic hydrogen annealing,  crystal orientation,  carrier mobility,  

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Summary: 
Effects of atomic hydrogen annealing (AHA) on the film properties and the electrical characteristics of pentacene organic thin-film transistors (OTFTs) are investigated. The surface energy of SiO2 surface and grain size of pentacene film were decreased with increasing AHA treatment time. For the treatment time of 300 s, pentacene film showed the (00l) and (011') orientation and high carrier mobility in spite of small crystal grain.