Evaluation of a Multi-Line De-Embedding Technique up to 110 GHz for Millimeter-Wave CMOS Circuit Design

Ning LI
Shogo ITO
Kenichi OKADA

IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E93-A    No.2    pp.431-439
Publication Date: 2010/02/01
Online ISSN: 1745-1337
DOI: 10.1587/transfun.E93.A.431
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
CMOS amplifier,  transmission line,  millimeter wave,  de-embedding,  60 GHz,  

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An L-2L through-line de-embedding method has been verified up to millimeter wave frequency. The parasitics of the pad can be modeled from the L-2L through-line. Measurement results of the transmission lines and transistors can be de-embedded by subtracting the parasitic matrix of the pad. Therefore, the de-embedding patterns, which is used for modeling active and passive devices, decrease greatly and the chip area also decreases. A one-stage amplifier is firstly implemented for helping verifying the de-embedding results. After that a four-stage 60 GHz amplifier has been fabricated in CMOS 65 nm process. Experimental results show that the four-stage amplifier realizes an input matching better than -10.5 dB and an output matching better than -13 dB at 61 GHz. A small signal power gain of 16.4 dB and a 1 dB output compression point of 4.6 dBm are obtained with a DC current consumption of 128 mA from a 1.2 V power supply. The chip size is 1.5 mm 0.85 mm.