A Flexible Microwave De-Embedding Method for On-Wafer Noise Parameter Characterization of MOSFETs

Yueh-Hua WANG
Ming-Hsiang CHO
Lin-Kun WU

IEICE TRANSACTIONS on Electronics   Vol.E92-C    No.9    pp.1157-1162
Publication Date: 2009/09/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E92.C.1157
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Progress in Microwave and Millimeter-Wave Technologies and Their Applications)
de-embedding,  microwave,  MOSFETs,  noise,  RF,  silicon,  

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A flexible noise de-embedding method for on-wafer microwave measurements of silicon MOSFETs is presented in this study. We use the open, short, and thru dummy structures to subtract the parasitic effects from the probe pads and interconnects of a fixtured MOS transistor. The thru standard are used to extract the interconnect parameters for subtracting the interconnect parasitics in gate, drain, and source terminals of the MOSFET. The parasitics of the dangling leg in the source terminal are also modeled and taken into account in the noise de-embedding procedure. The MOS transistors and de-embedding dummy structures were fabricated in a standard CMOS process and characterized up to 20 GHz. Compared with the conventional de-embedding methods, the proposed technique is accurate and area-efficient.