High Speed 1.1-µm-Range InGaAs-Based VCSELs

Naofumi SUZUKI  Takayoshi ANAN  Hiroshi HATAKEYAMA  Kimiyoshi FUKATSU  Kenichiro YASHIKI  Keiichi TOKUTOME  Takeshi AKAGAWA  Masayoshi TSUJI  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E92-C   No.7   pp.942-950
Publication Date: 2009/07/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E92.C.942
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Recent Advances in Ultra-high-speed Photonic Devices for Next-generation Optical Fiber Communications)
Category: 
Keyword: 
vertical-cavity surface-emitting lasers (VCSELs),  optical interconnections,  semiconductor lasers,  tunnel junction,  high-speed modulation,  

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Summary: 
We have developed InGaAs-based VCSELs operating around 1.1 µm for high-speed optical interconnections. By applying GaAsP barrier layers, temperature characteristics were considerably improved compared to GaAs barrier layers. As a result, 25 Gbps 100 error-free operation was achieved. These devices also exhibited high reliability. No degradation was observed over 3,000 hours under operation temperature of 150 and current density of 19 kA/cm2. We also developed VCSELs with tunnel junctions for higher speed operation. High modulation bandwidth of 24 GHz and a relaxation oscillation frequency of 27 GHz were achieved. 40 Gbps error-free operation was also demonstrated.