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High Speed 1.1-µm-Range InGaAs-Based VCSELs
Naofumi SUZUKI Takayoshi ANAN Hiroshi HATAKEYAMA Kimiyoshi FUKATSU Kenichiro YASHIKI Keiichi TOKUTOME Takeshi AKAGAWA Masayoshi TSUJI
IEICE TRANSACTIONS on Electronics
Publication Date: 2009/07/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Recent Advances in Ultra-high-speed Photonic Devices for Next-generation Optical Fiber Communications)
vertical-cavity surface-emitting lasers (VCSELs), optical interconnections, semiconductor lasers, tunnel junction, high-speed modulation,
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We have developed InGaAs-based VCSELs operating around 1.1 µm for high-speed optical interconnections. By applying GaAsP barrier layers, temperature characteristics were considerably improved compared to GaAs barrier layers. As a result, 25 Gbps 100 error-free operation was achieved. These devices also exhibited high reliability. No degradation was observed over 3,000 hours under operation temperature of 150 and current density of 19 kA/cm2. We also developed VCSELs with tunnel junctions for higher speed operation. High modulation bandwidth of 24 GHz and a relaxation oscillation frequency of 27 GHz were achieved. 40 Gbps error-free operation was also demonstrated.