For Full-Text PDF, please login, if you are a member of IEICE,|
or go to Pay Per View on menu list, if you are a nonmember of IEICE.
Comparisons of SiN Passivation Film Deposited by PE-CVD and T-CVD Method for AlGaN/GaN HEMTs on SiC Substrate
IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
AlGaN/GaN HEMTs, current collapse, SiN, passivation film, thermal CVD,
Full Text: PDF(949.9KB)>>
Current collapse phenomenon is a well known obstacle in the AlGaN/GaN HEMTs. In order to improve the surface stability of HEMTs, we have investigated the SiN passivation film deposited by T-CVD, and we found that it improves both gate leakage current and current collapse phenomenon . Moreover, we compared the T-CVD and PE-CVD passivation films, on high electric field DC and RF characteristics. We found that T-CVD SiN passivation film improves BVds-off by 30% because of the reduction of gate leakage current. It also improved ηd in the output power characteristics by load-pull measurement, which indicates the decrease of the current collapse phenomenon. Also we fabricated a multi-fingered 50 W-class AlGaN/GaN HEMT with T-CVD SiN passivation film and achieved 61.2% of high drain efficiency at frequency of 2.14 GHz, which was 3.6 points higher than that with PE-CVD SiN passivation film.