Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation

Masataka MIYAKE  Daisuke HORI  Norio SADACHIKA  Uwe FELDMANN  Mitiko MIURA-MATTAUSCH  Hans Jurgen MATTAUSCH  Takahiro IIZUKA  Kazuya MATSUZAWA  Yasuyuki SAHARA  Teruhiko HOSHIDA  Toshiro TSUKADA  

IEICE TRANSACTIONS on Electronics   Vol.E92-C   No.5   pp.608-615
Publication Date: 2009/05/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E92.C.608
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
carrier dynamics,  low voltage,  displacement current,  continuity equation,  carrier-transit delay,  nonquasi-static effect,  compact MOSFET model,  driving capability,  drift,  diffusion,  surface potential,  circuit simulation,  

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We analyze the carrier dynamics in MOSFETs under low-voltage operation. For this purpose the displacement (charging/discharging) current, induced during switching operations is studied experimentally and theoretically for a 90 nm CMOS technology. It is found that the experimental transient characteristics can only be well reproduced in the circuit simulation of low voltage applications by considering the carrier-transit delay in the compact MOSFET model. Long carrier transit delay under the low voltage switching-on operation results in long duration of the displacement current flow. On the other hand, the switching-off characteristics are independent of the bias condition.