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Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation
Masataka MIYAKE Daisuke HORI Norio SADACHIKA Uwe FELDMANN Mitiko MIURA-MATTAUSCH Hans Jurgen MATTAUSCH Takahiro IIZUKA Kazuya MATSUZAWA Yasuyuki SAHARA Teruhiko HOSHIDA Toshiro TSUKADA
IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
carrier dynamics, low voltage, displacement current, continuity equation, carrier-transit delay, nonquasi-static effect, compact MOSFET model, driving capability, drift, diffusion, surface potential, circuit simulation,
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We analyze the carrier dynamics in MOSFETs under low-voltage operation. For this purpose the displacement (charging/discharging) current, induced during switching operations is studied experimentally and theoretically for a 90 nm CMOS technology. It is found that the experimental transient characteristics can only be well reproduced in the circuit simulation of low voltage applications by considering the carrier-transit delay in the compact MOSFET model. Long carrier transit delay under the low voltage switching-on operation results in long duration of the displacement current flow. On the other hand, the switching-off characteristics are independent of the bias condition.