0.1 rad/pJ and the damage threshold power of
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All-Optical Demultiplexing from 160 to 40/80 Gb/s Using Mach-Zehnder Switches Based on Intersubband Transition of InGaAs/AlAsSb Coupled Double Quantum Wells
Ryoichi AKIMOTO Guangwei CONG Masanori NAGASE Teruo MOZUME Hidemi TSUCHIDA Toshifumi HASAMA Hiroshi ISHIKAWA
IEICE TRANSACTIONS on Electronics Vol.E92-C No.2 pp.187-193
Publication Date: 2009/02/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Recent Advances in Integrated Photonic Devices)
intersubband transition, coupled double quantum well, cross-phase modulation, Mach-Zehnder interferometer, all-optical demultiplexing,
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We demonstrated all-optical demultiplexing of 160-Gb/s signal to 40- and 80-Gb/s by a Mach-Zehnder Interferometric all-optical switch, where the picosecond cross-phase modulation (XPM) induced by intersubband excitation in InGaAs/AlAsSb coupled double quantum wells is utilized. A bi-directional pump configuration, i.e., two control pulses are injected from both sides of a waveguide chip simultaneously, increases a nonlinear phase shift twice in comparison with injection of single pump beam with forward- and backward direction. The bi-directional pump configuration is the effective way to avoid damaging waveguide facets in the case where high optical power of control pulse is necessary to be injected for optical gating at repetition rate of 40/80 GHz. Bit error rate (BER) measurements on 40-Gb/s demultiplexed signal show that the power penalty is decreased slightly for the bi-directional pump case in the BER range less than 10-6. The power penalty is 1.3 dB at BER of 10 - 9 for the bi-directional pump case, while it increases by 0.3-0.6 dB for single pump cases. A power penalty is influenced mainly by signal attenuation at "off" state due to the insufficient nonlinear phase shift, upper limit of which is constrained by the current low XPM efficiency of 0.1 rad/pJ and the damage threshold power of 100 mW in a waveguide facet.