Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide

Toshihiro MATSUDA  Shinsuke ISHIMARU  Shingo NOHARA  Hideyuki IWATA  Kiyotaka KOMOKU  Takayuki MORISHITA  Takashi OHZONE  

IEICE TRANSACTIONS on Electronics   Vol.E92-C   No.12   pp.1523-1530
Publication Date: 2009/12/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E92.C.1523
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
MOS capacitors,  Si-implantation,  thermal oxide,  I-V hysteresis,  hysteresis window,  nonvolatile memory,  

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MOS capacitors with Si-implanted thermal oxide and CVD deposited oxide of 30 nm thickness were fabricated for applications of non-volatile memory and electroluminescence devices. Current-voltage (I-V) and I-V hysteresis characteristics were measured, and the hysteresis window (HW) and the integrated charge of HW (ICHW) extracted from the hysteresis data were discussed. The HW characteristics of high Si dose samples showed the asymmetrical double-peaks curves with the hump in both tails. The ICHW almost converged after the 4th cycle and had the voltage sweep speed dependence. All +ICHW and -ICHW characteristics were closely related to the static (+I)-(+VG) and (-I)-(-VG) curves, respectively. For the high Si dose samples, the clear hump currents in the static I-VG characteristics contribute to lower the rising voltage and to steepen the ICHW increase, which correspond to the large stored charge in the oxide.