An Improved Nonlinear Circuit Model for GaAs Gunn Diode in W-Band Oscillator

Bo ZHANG  Yong FAN  Yonghong ZHANG  

IEICE TRANSACTIONS on Electronics   Vol.E92-C   No.12   pp.1490-1495
Publication Date: 2009/12/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E92.C.1490
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Microwaves, Millimeter-Waves
millimeter-wave,  GaAs Gunn diode,  nonlinear circuit model,  physical mechanism,  oscillator,  

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An improved nonlinear circuit model for a GaAs Gunn diode in an oscillator is proposed based on the physical mechanism of the diode. This model interprets the nonlinear harmonic character on the Gunn diode. Its equivalent nonlinear circuit of which can assist in the design of the Gunn oscillator and help in the analysis of the fundamental and harmonic characteristics of the GaAs Gunn diode. The simulation prediction and the experiment of the Gunn oscillator show the feasibility of the nonlinear circuit model for the GaAs Gunn oscillator.