Low-Temperature Fabrication of Ion-Induced Ge Nanostructures: Effect of Simultaneous Al Supply

Ako MIYAWAKI  Toshiaki HAYASHI  Masaki TANEMURA  Yasuhiko HAYASHI  Tomoharu TOKUNAGA  Tetsuo SOGA  

IEICE TRANSACTIONS on Electronics   Vol.E92-C   No.12   pp.1417-1420
Publication Date: 2009/12/01
Online ISSN: 1745-1353
DOI: 10.1587/transele.E92.C.1417
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Nanomaterials and Nanodevices for Nanoscience and Nanotechnology)
Category: Nanomaterials and Nanostructures
nanomaterial,  nanostructure,  nanorod,  ion irradiation,  Ge,  

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Ge surfaces were irradiated by Ar+ ions at 600 eV with and without simultaneous supply of Ge or Al at room temperature. The surfaces ion-irradiated without any simultaneous metal supply were characterized by densely distributed conical protrusions. By contrast, various kinds of nanostructures were formed on the Ge surfaces ion-irradiated with a simultaneous metal supply. They featured cones and nanobelts with a flattened top for Ge supply cases, whereas they were characterized by the nanorods, nanobelts and nanowalls for Al supply cases. Very interestingly, most of the nanorods and nanobelts formed with an Al supply possessed a bottleneck structure. Thus, the Ge nanostructures were controllable in morphology by species and amount of simultaneously supplied metals.