A PN Junction-Current Model for Advanced MOSFET Technologies

Ryosuke INAGAKI  Norio SADACHIKA  Mitiko MIURA-MATTAUSCH  Yasuaki INOUE  

Publication
IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E92-A    No.4    pp.983-989
Publication Date: 2009/04/01
Online ISSN: 1745-1337
DOI: 10.1587/transfun.E92.A.983
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Advanced Technologies Emerging Mainly from the 21st Workshop on Circuits and Systems in Karuizawa)
Category: 
Keyword: 
HiSIM,  PN junction current,  diode current,  surface potential,  

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Summary: 
A PN junction current model for advanced MOSFETs is proposed and implemented into HiSIM2, a complete surface-potential-based MOSFET model. The model includes forward diode currents and reverse diode currents, and requires a total of 13 model parameters covering all bias conditions. Model simulation results reproduce measurements for different device geometries over a wide range of bias and temperature values.