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Wavelength Switching Using GaInAs/InP MQW Variable Refractive-Index Arrayed Waveguides by Thermo-Optic Effect
Yu SHIMIZU Sou KAWABE Hiroya IWASAKI Takayuki SUGIO Kazuhiko SHIMOMURA
IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Section on Opto-electronics and Communications toward NGN and beyond)
arrayed waveguide, GaInAs/InP, multiple quantum well (MQW), wavelength switch, wavelength demultiplexer, selective area growth, metal-organic vapor phase epitaxy (MOVPE), thermo-optic effect,
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We have successfully demonstrated a GaInAs/InP multiple quantum well (MQW)-based wavelength switch composed of the straight arrayed waveguide with linearly varying refractive index distribution by changing the refractive index using thermo-optic effect. Since optical path length differences between waveguides in the array were achieved through refractive index differences that were controlled by SiO2 mask design in selective metal-organic vapor phase epitaxy (MOVPE), wavelength demultiplexing, and the output port switching in each wavelength of light by the refractive index change in the array waveguides through the thermo-optic effect were achieved. We have obtained the wavelength switching and the change of transmission spectra in each output ports.