Wavelength Switching Using GaInAs/InP MQW Variable Refractive-Index Arrayed Waveguides by Thermo-Optic Effect

Yu SHIMIZU  Sou KAWABE  Hiroya IWASAKI  Takayuki SUGIO  Kazuhiko SHIMOMURA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.7   pp.1110-1116
Publication Date: 2008/07/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.7.1110
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Joint Special Section on Opto-electronics and Communications toward NGN and beyond)
Category: 
Keyword: 
arrayed waveguide,  GaInAs/InP,  multiple quantum well (MQW),  wavelength switch,  wavelength demultiplexer,  selective area growth,  metal-organic vapor phase epitaxy (MOVPE),  thermo-optic effect,  

Full Text: PDF>>
Buy this Article




Summary: 
We have successfully demonstrated a GaInAs/InP multiple quantum well (MQW)-based wavelength switch composed of the straight arrayed waveguide with linearly varying refractive index distribution by changing the refractive index using thermo-optic effect. Since optical path length differences between waveguides in the array were achieved through refractive index differences that were controlled by SiO2 mask design in selective metal-organic vapor phase epitaxy (MOVPE), wavelength demultiplexing, and the output port switching in each wavelength of light by the refractive index change in the array waveguides through the thermo-optic effect were achieved. We have obtained the wavelength switching and the change of transmission spectra in each output ports.