1.8 V Operation Power Amplifier IC for Bluetooth Class 1 Utilizing p+-GaAs Gate Hetero-Junction FET

Fumio HARIMA  Yasunori BITO  Hidemasa TAKAHASHI  Naotaka IWATA  

IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.7   pp.1104-1108
Publication Date: 2008/07/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.7.1104
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaAs- and InP-Based Devices
enhancement mode,  hetero-junction FETs,  power amplifiers,  

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We have developed a power amplifier IC for Bluetooth Class 1 operating at single low voltage of 1.8 V for both control and drain voltages. We can realize it due to fully enhancement-mode hetero-junction FETs utilizing a re-grown p +-GaAs gate technology. The power amplifier is a highly compact design as a small package of 1.5 mm1.5 mm0.4 mm with fully integrated gain control and shutdown functions. An impressive power added efficiency of 52% at an output power of 20 dBm is achieved with an associated gain of 22 dB. Also, sufficiently low leakage current of 0.25 µA at 27 is exhibited, which is comparable to conventional HBT power amplifiers.