Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications

J. Brad BOOS  Brian R. BENNETT  Nicolas A. PAPANICOLAOU  Mario G. ANCONA  James G. CHAMPLAIN  Yeong-Chang CHOU  Michael D. LANGE  Jeffrey M. YANG  Robert BASS  Doewon PARK  Ben V. SHANABROOK  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.7   pp.1050-1057
Publication Date: 2008/07/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.7.1050
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: 
Keyword: 
HEMTs,  HFETs,  MMICs,  InAs,  InGaSb,  

Full Text: PDF(724KB)>>
Buy this Article




Summary: 
Heterostructure field-effect transistors (HFETs) composed of antimonide-based compound semiconductor (ABCS) materials have intrinsic performance advantages due to the attractive electron and hole transport properties, narrow bandgaps, low ohmic contact resistances, and unique band-lineup design flexibility within this material system. These advantages can be particularly exploited in applications where high-speed operation and low-power consumption are essential. In this paper, we report on recent advances in the design, material growth, device characteristics, oxidation stability, and MMIC performance of Sb-based HEMTs with an InAlSb upper barrier layer. The high electron mobility transistors (HEMTs) exhibit a transconductance of 1.3 S/mm at VDS = 0.2 V and an fTLg product of 33 GHz-µm for a 0.2 µm gate length. The design, fabrication and improved performance of InAlSb/InGaSb p-channel HFETs are also presented. The HFETs exhibit a mobility of 1500 cm2/V-sec, an fmax of 34 GHz for a 0.2 µm gate length, a threshold voltage of 90 mV, and a subthreshold slope of 106 mV/dec at VDS = -1.0 V.