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Current Status and Future Prospects of SiC Power JFETs and ICs
Jian H. ZHAO Kuang SHENG Yongxi ZHANG Ming SU
IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
silicon carbide (SiC), junction field-effect transistor (JFET), power integrated circuits, normally off, high temperature electronics,
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This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35 MHz will be discussed.