Current Status and Future Prospects of SiC Power JFETs and ICs

Jian H. ZHAO  Kuang SHENG  Yongxi ZHANG  Ming SU  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.7   pp.1031-1041
Publication Date: 2008/07/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.7.1031
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: 
Keyword: 
silicon carbide (SiC),  junction field-effect transistor (JFET),  power integrated circuits,  normally off,  high temperature electronics,  

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Summary: 
This paper will review the development of SiC power devices especially SiC power junction field-effect transistors (JFETs). Rationale and different approaches to the development of SiC power JFETs will be presented, focusing on normally-OFF power JFETs that can provide the highly desired fail-save feature for reliable power switching applications. New results for the first demonstration of SiC Power ICs will be presented and the potential for distributed DC-DC power converters at frequencies higher than 35 MHz will be discussed.