A GaAs SOI HEMT Fabricated by Fluidic Self-Assembly and Its Application to an RF-Switch

Koichi MAEZAWA  Ikuo SOGA  Shigeru KISHIMOTO  Takashi MIZUTANI  Kazuhiro AKAMATSU  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.7   pp.1025-1030
Publication Date: 2008/07/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.7.1025
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Novel Integration Technology
Keyword: 
heterogeneous integration,  fluidic self-assembly,  HEMT,  SPDT switch,  SOI,  

Full Text: PDF(1.5MB)>>
Buy this Article




Summary: 
The heterogeneous integration of GaAs HEMTs on a polyimide-covered AlN ceramic substrate was demonstrated using a fluidic self-assembly (FSA) technique. We used thin device blocks for the FSA, which have various advantages. In particular, they can reduce the drain-source capacitance Cds of the assembled HEMTs if the substrate has a low dielectric constant. This is a novel kind of semiconductor-on-insulator (SOI) technology. The dc and RF properties of the GaAs HEMTs on the polyimide/AlN substrate were studied and the reduction of Cds was confirmed. This technique was successfully applied to the SPDT switch, where a low Cds is essential for good isolation.