Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide

Shun SUGIURA  Shigeru KISHIMOTO  Takashi MIZUTANI  Masayuki KURODA  Tetsuzo UEDA  Tsuyoshi TANAKA  

IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.7   pp.1001-1003
Publication Date: 2008/07/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.7.1001
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
enhancement,  GaN,  MOSFETs,  HfO2,  

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We have fabricated enhancement-mode n-channel GaN MOSFETs with overlap gate structure on a p-GaN using thick HfO2 as a gate insulator. The maximum transconductance of 23 mS/mm which is 4 times larger, to our knowledge, than the best-reported value of the normally-off GaN MOSFETs with SiO2 gate oxide has been obtained.