FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs

Hochul LEE  Youngchang YOON  Ickhyun SONG  Hyungcheol SHIN  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.5   pp.776-779
Publication Date: 2008/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.5.776
Print ISSN: 0916-8516
Type of Manuscript: Special Section LETTER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
random telegraph signal noise,  FN stress,  flash memory,  MOSFET,  

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Summary: 
As the gate area decreases to the order of a square micron, individual trapping events can be detected as fluctuations between discrete levels of the drain current, known as random telegraph signal (RTS) noise. Many circuit application areas such as CMOS Image sensor and flash memory are already suffering from RTS noise. Especially, in case of flash memory, FN stress causes threshold voltage shift problems due to generation of additional oxide traps, which degrades circuit performance. In this paper, we investigated how FN stress effects on RTS noise behavior in MOSFET and monitored it in both the time domain and frequency domain.