Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS

Seung-Hyun SONG  Jae-Chul KIM  Sung-Woo JUNG  Yoon-Ha JEONG  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.5   pp.761-766
Publication Date: 2008/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.5.761
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
GIDL,  junction,  halo,  nanoscale CMOS,  

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Summary: 
This study describes the dependence of the surface electric field to the junction depth of source/drain-extension, and the suppression of gate induced drain leakage (GIDL) in fully depleted shallow junction gate-overlapped source/drain-extension (SDE). The GIDL can be reduced by reducing shallow junction depth of drain-extension. Total space charges are a function of junction depth in fully depleted shallow junction drain-extension, and the surface potential is proportional to these charges. Because the GIDL is proportional to surface potential, GIDL is the function of junction depth in fully depleted shallow junction drain-extension. Therefore, the GIDL is suppressed in a fully depleted shallow junction drain-extension by reducing surface potential. Negative substrate bias and halo doping could suppress the GIDL, too. The GIDL characteristic under negative substrate bias is contrary to other GIDL models.