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Junction Depth Dependence of the Gate Induced Drain Leakage in Shallow Junction Source/Drain-Extension Nano-CMOS
Seung-Hyun SONG Jae-Chul KIM Sung-Woo JUNG Yoon-Ha JEONG
IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
GIDL, junction, halo, nanoscale CMOS,
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This study describes the dependence of the surface electric field to the junction depth of source/drain-extension, and the suppression of gate induced drain leakage (GIDL) in fully depleted shallow junction gate-overlapped source/drain-extension (SDE). The GIDL can be reduced by reducing shallow junction depth of drain-extension. Total space charges are a function of junction depth in fully depleted shallow junction drain-extension, and the surface potential is proportional to these charges. Because the GIDL is proportional to surface potential, GIDL is the function of junction depth in fully depleted shallow junction drain-extension. Therefore, the GIDL is suppressed in a fully depleted shallow junction drain-extension by reducing surface potential. Negative substrate bias and halo doping could suppress the GIDL, too. The GIDL characteristic under negative substrate bias is contrary to other GIDL models.