A PVT Tolerant STM-16 Clock-and-Data Recovery LSI Using an On-Chip Loop-Gain Variation Compensation Architecture in 0.20-µm CMOS/SOI

Yusuke OHTOMO  Hiroshi KOIZUMI  Kazuyoshi NISHIMURA  Masafumi NOGAWA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.4   pp.655-661
Publication Date: 2008/04/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.4.655
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword: 
LSI,  CDR,  CMOS,  SOI,  jitter,  

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Summary: 
This paper proposes an on-chip loop gain variation compensation architecture for a clock and data recovery (CDR) LSI. The CDR LSI using the proposed architecture can meet the jitter specifications recommended in ITU-T G.958 under wide variation of temperature and supply voltage. The relation between the jitter specifications and the loop gain is derived theoretically. Gain-variation characteristics of component circuits are studied by circuit simulation. The proposed architecture uses voltage controllers to reduce the gain variation of the LC voltage controlled oscillator (LC-VCO) circuit and charge-pump circuit. The voltage controllers are designed to have a first-order positive coefficient to temperature, which is found by an analysis of the gain variation characteristics. An STM-16 CDR with the proposed architecture is implemented in 0.20-µm fully depleted CMOS/SOI. The CDR shows a wide capture range of 140 MHz and meets both the jitter transfer and the jitter tolerance specifications in the ambient temperature range from -40 to 85 and with the supply voltage variation of 6%.