Circuit Performance Degradation of Switched-Capacitor Circuit with Bootstrapped Technique due to Gate-Oxide Overstress in a 130-nm CMOS Process

Jung-Sheng CHEN
Ming-Dou KER

IEICE TRANSACTIONS on Electronics   Vol.E91-C    No.3    pp.378-384
Publication Date: 2008/03/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.3.378
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Electronic Circuits
gate-oxide reliability,  sample-and-hold amplifier,  dielectric breakdown,  bootstrapped switch,  switched-capacitor circuit,  

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The MOS switch with bootstrapped technique is widely used in low-voltage switched-capacitor circuit. The switched-capacitor circuit with the bootstrapped technique could be a dangerous design approach in the nano-scale CMOS process due to the gate-oxide transient overstress. The impact of gate-oxide transient overstress on MOS switch in switched-capacitor circuit is investigated in this work with the sample-and-hold amplifier (SHA) in a 130-nm CMOS process. After overstress on the MOS switch of SHA with unity-gain buffer, the circuit performances in time domain and frequency domain are measured to verify the impact of gate-oxide reliability on circuit performances. The oxide breakdown on switch device degrades the circuit performance of bootstrapped switch technique.