Enabling Light Emission from Si Based MOSLED on Surface Nano-Roughened Si Substrate

Gong-Ru LIN  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E91-C    No.2    pp.173-180
Publication Date: 2008/02/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.2.173
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
Category: 
Keyword: 
Si-ion-implantation,  PECVD,  nanocrystal,  silicon,  Si-rich SiOx,  nano-pyramids,  nano-pillars,  MOSLED,  electroluminescence,  Fowler-Nordheim tunneling,  

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Summary: 
The historical review of Taiwan's researching activities on the features of PECVD grown SiOx are also included to realize the performance of Si nanocrystal based MOSLED made by such a Si-rich SiOx film with embedded Si nanocrystals on conventional Si substrate. A surface nano-roughened Si substrate with interfacial Si nano-pyramids at SiOx/Si interface are also reviewed, which provide the capabilities of enhancing the surface roughness induced total-internal-reflection relaxation and the Fowler-Nordheim tunneling based carrier injection. These structures enable the light emission and extraction from a metal-SiOx-Si MOSLED.