Monolithic Integration of III-V Active Devices into Silicon Platform for Optoelectronic Integrated Circuits

Yuzo FURUKAWA  Hiroo YONEZU  Akihiro WAKAHARA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.2   pp.145-149
Publication Date: 2008/02/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.2.145
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
Category: 
Keyword: 
Si,  III-V-N alloys,  light emitting diode,  MOSFET,  monolithic-integration,  

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Summary: 
Structural defect-free GaPN and InGaPN layers were grown on a Si (100) substrate. Light emitting diodes (LEDs) and Si metal-oxide-semiconductor field effect transistors (MOSFETs), which are elemental devices for optoelectronic integrated circuits(OEICs), were monolithically integrated in a single chip with a Si layer and an InGaPN/GaPN double hetereostructure layer grown on a Si substrate. The developed process flow was based on a conventional MOSFET process flow. It was confirmed that light emission from the LED was modulated by switching the MOSFET. The growth and fabrication process technologies are effective in the realization of monolithic OEICs.