LSI On-Chip Optical Interconnection with Si Nano-Photonics

Junichi FUJIKATA  Kenichi NISHI  Akiko GOMYO  Jun USHIDA  Tsutomu ISHI  Hiroaki YUKAWA  Daisuke OKAMOTO  Masafumi NAKADA  Takanori SHIMIZU  Masao KINOSHITA  Koichi NOSE  Masayuki MIZUNO  Tai TSUCHIZAWA  Toshifumi WATANABE  Koji YAMADA  Seiichi ITABASHI  Keishi OHASHI  

IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.2   pp.131-137
Publication Date: 2008/02/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.2.131
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
optical interconnect,  LSI,  Si nano-photonics,  SiON waveguide,  Si nano-photodiode,  surface plasmon antenna,  TIA-less optical clock circuit,  

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LSI on-chip optical interconnections are discussed from the viewpoint of a comparison between optical and electrical interconnections. Based on a practical prediction of our optical device development, optical interconnects will have an advantage over electrical interconnects within a chip that has an interconnect length less than about 10 mm at the hp32-22 nm technology node. Fundamental optical devices and components used in interconnections have also been introduced that are small enough to be placed on top of a Si LSI and that can be fabricated using methods compatible with CMOS processes. A SiON waveguide showed a low propagation loss around 0.3 dB/cm at a wavelength of 850 nm, and excellent branching characteristics were achieved for MMI (multimode interference) branch structures. A Si nano-photodiode showed highly enhanced speed and efficiency with a surface plasmon antenna. By combining our Si nano-photonic devices with the advanced TIA-less optical clock distribution circuits, clock distribution above 10 GHz can be achieved with a small footprint on an LSI chip.