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LSI On-Chip Optical Interconnection with Si Nano-Photonics
IEICE TRANSACTIONS on Electronics
Publication Date: 2008/02/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section INVITED PAPER (Special Section on Silicon Photonics Technologies and Their Applications)
optical interconnect, LSI, Si nano-photonics, SiON waveguide, Si nano-photodiode, surface plasmon antenna, TIA-less optical clock circuit,
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LSI on-chip optical interconnections are discussed from the viewpoint of a comparison between optical and electrical interconnections. Based on a practical prediction of our optical device development, optical interconnects will have an advantage over electrical interconnects within a chip that has an interconnect length less than about 10 mm at the hp32-22 nm technology node. Fundamental optical devices and components used in interconnections have also been introduced that are small enough to be placed on top of a Si LSI and that can be fabricated using methods compatible with CMOS processes. A SiON waveguide showed a low propagation loss around 0.3 dB/cm at a wavelength of 850 nm, and excellent branching characteristics were achieved for MMI (multimode interference) branch structures. A Si nano-photodiode showed highly enhanced speed and efficiency with a surface plasmon antenna. By combining our Si nano-photonic devices with the advanced TIA-less optical clock distribution circuits, clock distribution above 10 GHz can be achieved with a small footprint on an LSI chip.