Characterization of Organic Static Induction Transistors with Nano-Gap Gate Fabricated by Electron Beam Lithography

Hiroshi YAMAUCHI  Yasuyuki WATANABE  Masaaki IIZUKA  Masakazu NAKAMURA  Kazuhiro KUDO  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.12   pp.1852-1855
Publication Date: 2008/12/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.12.1852
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on The Forefront of 21st Century Organic Molecular Electronics)
Category: Transistors
Keyword: 
organic static induction transistor,  nano-gap,  electron beam lithography,  

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Summary: 
Organic static induction transistor (OSIT) is a promising driving device for the displays, since it shows high-speed, high-power and low-voltage operation. In this study, the OSIT with fine gate electrode patterned by electron beam exposure were fabricated. We investigated the basic electrical characteristics of copper phthalocyanine OSIT and compared with the calculation results obtained by two-dimensional (2D) device simulator. The experimental results show that the gate modulation improved by reducing the electrode gap and on/off current ratio depends on the gate gap.