InGaP/GaAs HBT MMIC Amplifier with Low Power Consumption and Low Noise Characteristics for Full-Band UWB Receiver Systems

Ryo ISHIKAWA  Takuya ABE  Kazuhiko HONJO  Masao SHIMADA  

IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.11   pp.1828-1831
Publication Date: 2008/11/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.11.1828
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Microwaves, Millimeter-Waves

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A wideband InGaP/GaAs HBT MMIC amplifier with a low noise characteristic has been developed as a full-band UWB receiver. The amplifier was designed by applying a scaling law to a driver amplifier in order to decrease power consumption, including a modification for decreasing a noise figure. A triple base structure for a double-emitter HBT was employed to decrease a base resistance and to decrease a noise figure of the amplifier. A fabricated amplifier provided a 3-dB gain roll-off bandwidth from 1.1 GHz to 10.6 GHz with a 14.1 dB peak power gain. The amplifier exhibited a low power consumption of 15.9 mW and a low noise figure of less than 3.7 dB in the full-band of the UWB.