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InGaP/GaAs HBT MMIC Amplifier with Low Power Consumption and Low Noise Characteristics for Full-Band UWB Receiver Systems
Ryo ISHIKAWA Takuya ABE Kazuhiko HONJO Masao SHIMADA
IEICE TRANSACTIONS on Electronics
Publication Date: 2008/11/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Microwaves, Millimeter-Waves
UWB, LNA, InGaP/GaP HBT, MMIC,
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A wideband InGaP/GaAs HBT MMIC amplifier with a low noise characteristic has been developed as a full-band UWB receiver. The amplifier was designed by applying a scaling law to a driver amplifier in order to decrease power consumption, including a modification for decreasing a noise figure. A triple base structure for a double-emitter HBT was employed to decrease a base resistance and to decrease a noise figure of the amplifier. A fabricated amplifier provided a 3-dB gain roll-off bandwidth from 1.1 GHz to 10.6 GHz with a 14.1 dB peak power gain. The amplifier exhibited a low power consumption of 15.9 mW and a low noise figure of less than 3.7 dB in the full-band of the UWB.