Avalanche Amplification in Silicon Lateral Photodiode Fabricated by Standard 0.18 µm CMOS Process

Koichi IIYAMA  Noriaki SANNOU  Hideki TAKAMATSU  

IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.11   pp.1820-1823
Publication Date: 2008/11/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.11.1820
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Lasers, Quantum Electronics
photodiode,  silicon,  CMOS process,  avalanche gain,  

Full Text: PDF(248.6KB)>>
Buy this Article

A silicon lateral photodiode is fabricated by standard 0.18 µm CMOS process, and the optical detection property is characterized. The photodiode has interdigital electrode structure with the electrode width of 0.22 µm and the electrode spacing of 0.6 µm. At 830 nm wavelength, the responsivity is 0.12 A/W at low bias voltage, and is increased to 0.6 A/W due to avalanche amplification. The bandwidth is also enhanced from 12 MHz at low bias voltage to 100 MHz at the bias voltage close to the breakdown voltage.