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Avalanche Amplification in Silicon Lateral Photodiode Fabricated by Standard 0.18 µm CMOS Process
Koichi IIYAMA Noriaki SANNOU Hideki TAKAMATSU
IEICE TRANSACTIONS on Electronics
Publication Date: 2008/11/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: LETTER
Category: Lasers, Quantum Electronics
photodiode, silicon, CMOS process, avalanche gain,
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A silicon lateral photodiode is fabricated by standard 0.18 µm CMOS process, and the optical detection property is characterized. The photodiode has interdigital electrode structure with the electrode width of 0.22 µm and the electrode spacing of 0.6 µm. At 830 nm wavelength, the responsivity is 0.12 A/W at low bias voltage, and is increased to 0.6 A/W due to avalanche amplification. The bandwidth is also enhanced from 12 MHz at low bias voltage to 100 MHz at the bias voltage close to the breakdown voltage.