Estimation of Optimum Ion Energy for the Reduction of Resistivity in Bias Sputtering of ITO Thin Films

Kiyoshi ISHII  Yoshifumi SAITOU  Kengo FURUTANI  Hiroshi SAKUMA  Yoshito IKEDA  

IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.10   pp.1653-1657
Publication Date: 2008/10/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.10.1653
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Functional Thin Films for Optical Applications)
tin-doped indium oxide,  transparent thin film,  ITO,  sputtered film,  gas flow sputtering,  

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Tin-doped indium oxide (ITO) thin films were prepared on a polyethylene terephthalate (PET) foil by bias sputtering. In the absence of a substrate bias, films having a high resistivity of 210-2 Ωcm were formed. On the other hand, by the application of an rf substrate bias, films having a low resistivity of 2.610-4 Ωcm were formed. The energy of ions that bombarded the substrate during bias sputtering was estimated by a simulation of the ion acceleration. The optimum ion-energy required for the reduction of resistivity was found to be approximately 50 eV.