Publication IEICE TRANSACTIONS on ElectronicsVol.E91-CNo.10pp.1653-1657 Publication Date: 2008/10/01 Online ISSN: 1745-1353 DOI: 10.1093/ietele/e91-c.10.1653 Print ISSN: 0916-8516 Type of Manuscript: Special Section PAPER (Special Section on Functional Thin Films for Optical Applications) Category: Keyword: tin-doped indium oxide, transparent thin film, ITO, sputtered film, gas flow sputtering,
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Summary: Tin-doped indium oxide (ITO) thin films were prepared on a polyethylene terephthalate (PET) foil by bias sputtering. In the absence of a substrate bias, films having a high resistivity of 210-2 Ωcm were formed. On the other hand, by the application of an rf substrate bias, films having a low resistivity of 2.610-4 Ωcm were formed. The energy of ions that bombarded the substrate during bias sputtering was estimated by a simulation of the ion acceleration. The optimum ion-energy required for the reduction of resistivity was found to be approximately 50 eV.