Characteristcs of Ga-Doped ZnO Films Prepared by RF Magnetron Sputtering in Ar+H2 Ambience

Koichi MUTO  Satoru ODASHIMA  Norimitsu NASU  Osamu MICHIKAMI  

IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.10   pp.1649-1652
Publication Date: 2008/10/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.10.1649
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Functional Thin Films for Optical Applications)
Ga-doped ZnO thin film,  magnetron sputtering,  Ar+H2 gas,  transparent and conductive film,  

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Ga-doped ZnO thin films were prepared by RF magnetron sputtering. The effects of adding H2 to pure Ar sputtering gas were investigated. In the case of pure Ar at 2 Pa, the resistivity is 7.4510-3 Ωcm, whereas for Ar+1%H2 at 0.3 Pa, it markedly decreases to 2.5210-4 Ωcm. In this case, the carrier density and Hall mobility are 1.121021 cm-3 and 23.4 cm2/Vs, respectively. This conductive film also exhibits a transmittance of 90% within the visible-wavelength range. The addition of H2 and the decrease in the pressure results in the fabrication of a significantly more transparent and conductive film.