Device Characterization of Thin-Film Phototransistors for Photosensor Applications

Mutsumi KIMURA  Yoshitaka NISHIZAKI  Takehiko YAMASHITA  Takehiro SHIMA  Tomohisa HACHIDA  

IEICE TRANSACTIONS on Electronics   Vol.E91-C   No.10   pp.1557-1563
Publication Date: 2008/10/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e91-c.10.1557
Print ISSN: 0916-8516
Type of Manuscript: INVITED PAPER (Special Section on Electronic Displays)
device characterization,  thin-film phototransistor,  photosensor application,  p/i/n thin-film phototransistor,  n/i/n thin-film phototransistor,  

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Two types of thin-film phototransistors (TFPTs), p/i/n TFPT and n/i/n TFPT, are characterized from the viewpoint of operation condition and device behavior. It is found that the detected current can be both independent of the applied voltage (Vapply) and linearly dependent on the photo-illuminance in the saturation region of the p/i/n TFPT. This characteristic is because even if Vapply increases, the depletion layer remains in the whole intrinsic region, and the electric field changes only near the p-type/intrinsic interface and intrinsic/n-type interface but remains in the most intrinsic region. This characteristic is preferable for some kinds of photosensor applications. Finally, an application example of the p/i/n TFPT, artificial retina, is introduced.