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An Analysis of Antenna Integrated THz Oscillator Using a Negative Differential Resistance Transistor
Katsumi FURUYA Takeyoshi SUGAYA Kazuhiro KOMORI Masahiro ASADA
IEICE TRANSACTIONS on Communications
Publication Date: 2008/06/01
Online ISSN: 1745-1345
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on 2007 International Symposium on Antennas and Propagation)
terahertz, Negative differential resistance-Dual channel transistor, ultra-high frequency oscillator, slit-reflector, slot antenna,
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As THz wave has the advantages of enough resolution and penetration to materials, it has been examined to be used for the imaging system. The propagation distance of THz wave is limited to be short. That is also the advantage for application to the indoor wireless communication etc. For the achievement of the ultra-high frequency oscillator (and concurrently transmitter) device, the properties of small, electronic excitation, the antenna constructed and being on the wafer are important. For the purpose, the Negative differential resistance Dual channel transistor (NDR-DCT) proposed by AIST is utilized. In this paper, as an initial theoretical analysis, we simulated the oscillation frequency of this device at about 100 GHz-1THz within the Terahertz band on which the above applications was expected. The equivalent circuit model of NDR-DCT was shown based on the analogy with the resonant tunnelling diode (RTDs), and the antenna as the resonance circuit part was designed by the numerical analysis. The possibility of the THz oscillation of this device was confirmed. The slit reflector that we proposed can realize the slot antenna on the device effectively and is suitable for three terminal structure semiconductor. its manufacturing is relatively easy.