A Finite Element-Domain Decomposition Coupled Resistance Extraction Method with Virtual Terminal Insertion

Bo YANG  Hiroshi MURATA  Shigetoshi NAKATAKE  

IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences   Vol.E91-A   No.2   pp.542-549
Publication Date: 2008/02/01
Online ISSN: 1745-1337
DOI: 10.1093/ietfec/e91-a.2.542
Print ISSN: 0916-8508
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit Techniques and Related Topics)
DMOS,  finite element method,  domain decomposition,  sub-domain reuse,  resistance extraction,  

Full Text: PDF>>
Buy this Article

This paper addresses the on-resistance (Ron) extraction of the DMOS based driver in Power IC designs. The proposed method can extract Ron of a driver from its layout data for the arbitrarily shaped metallization patterns. Such a driver is usually composed of arbitrarily shaped metals, arrayed vias, and DMOS transistors. We use FEM to extract the parasitic resistance of the source/drain metals since its strong contribution to Ron. In order to handle the large design case and accelerate the extraction process, a domain decomposition with virtual terminal insertion method is introduced, which succeeds in extraction for a set of industrial test cases including those the FEM without domain decomposition failed in. For a layout in which the DMOS cells are regularly placed, a sub-domain reuse procedure is also proposed, which obtained a dramatic speedup for the extraction. Even without the sub-domain reuse, our method still shows advantage in runtime and memory usage according to the simulation results.