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Characteristics of Nano-Grating N-Channel MOSFETs for Improved Current Drivability
Xiaoli ZHU Shin-Ichiro KUROKI Koji KOTANI Hideharu SHIDO Masatoshi FUKUDA Yasuyoshi MISHIMA Takashi ITO
IEICE TRANSACTIONS on Electronics
Publication Date: 2007/09/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
nano-grating, transconductance, effective mobility, current-drivability,
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Drivability-improved MOSFETs were successfully fabricated by using nano-grating silicon wafers. There was almost no additional process change in device fabrication when the height of the gratings was less than the conventional macroscopic wafer surface roughness. The MOSFETs with the grating height of 35 nm showed 21% improvement in current drivability compared to the conventional one with the same device occupancy area. And the roll-off characteristic of threshold voltage of nano-grating device held the line of conventional one in despite of the 3-D channel structure. The technology provides great advantages for drivability improvement without paying much tradeoff of process cost. This proposal will be useful to CMOS-LSIs with high performance in general.