Characteristics of Nano-Grating N-Channel MOSFETs for Improved Current Drivability

Xiaoli ZHU  Shin-Ichiro KUROKI  Koji KOTANI  Hideharu SHIDO  Masatoshi FUKUDA  Yasuyoshi MISHIMA  Takashi ITO  

IEICE TRANSACTIONS on Electronics   Vol.E90-C   No.9   pp.1830-1836
Publication Date: 2007/09/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.9.1830
Print ISSN: 0916-8516
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
nano-grating,  transconductance,  effective mobility,  current-drivability,  

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Drivability-improved MOSFETs were successfully fabricated by using nano-grating silicon wafers. There was almost no additional process change in device fabrication when the height of the gratings was less than the conventional macroscopic wafer surface roughness. The MOSFETs with the grating height of 35 nm showed 21% improvement in current drivability compared to the conventional one with the same device occupancy area. And the roll-off characteristic of threshold voltage of nano-grating device held the line of conventional one in despite of the 3-D channel structure. The technology provides great advantages for drivability improvement without paying much tradeoff of process cost. This proposal will be useful to CMOS-LSIs with high performance in general.