A 5.8-GHz ETC Transceiver Using SiGe-BiCMOS

Minoru NAGATA  Hideaki MASUOKA  Shin-ichi FUKASE  Makoto KIKUTA  Makoto MORITA  Nobuyuki ITOH  

IEICE TRANSACTIONS on Electronics   Vol.E90-C   No.9   pp.1721-1728
Publication Date: 2007/09/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.9.1721
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: Active Devices/Circuits
ETC transceiver,  internal matching circuits,  ASK modulator,  ∞-shape inductor VCO,  

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A fully integrated 5.8 GHz ETC transceiver LSI has been developed. The transceiver consists of LNA, down-conversion MIX, ASK detector, ASK modulator, DA VCO, and ΔΣ-fractional-N PLL. The features of the transceiver are integrated matching circuitry for LNA input and for DA output, ASK modulator with VGA for local signal control to avoid local leakage and to keep suitable modulation index, and LO circuitry consisting of ΔΣ-fractional-N PLL and interference-robust ∞-shape inductor VCO to diminish magnetic coupling from any other circuitry. Use of these techniques enabled realization of the input and output VSWR of less than 1.25, modulation index of over 95%, and enough qualified TX signals. This transceiver was manufactured by 1P3M SiGe-BiCMOS process with 47 GHz cut-off frequency.