Application of Microwave and Millimeter-Wave Circuit Technologies to InGaP-HBT ICs for 40-Gbps Optical Transmission Systems

Ken'ichi HOSOYA  Yasuyuki SUZUKI  Yasushi AMAMIYA  Zin YAMAZAKI  Masayuki MAMADA  Akira FUJIHARA  Masafumi KAWANAKA  Shin'ichi TANAKA  Shigeki WADA  Hikaru HIDA  

IEICE TRANSACTIONS on Electronics   Vol.E90-C    No.9    pp.1685-1694
Publication Date: 2007/09/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.9.1685
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Microwave and Millimeter-Wave Technology)
Category: Active Devices/Circuits
microwave,  millimeter-wave,  MMIC,  GaAs HBT,  optical transmission system,  distributed amplifier,  frequency doubler,  phase shifter,  flip flop,  jitter,  impedance matching,  

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Application of microwave and millimeter-wave circuit technologies to InGaP-HBT ICs for 40-Gbps optical-transmission systems is demonstrated from two aspects. First, ICs for various important functions -- amplification of data signals, amplification, frequency doubling, and phase control of clock signals -- are successfully developed based on microwave and millimeter-wave circuit configurations mainly composed of distributed elements. A distributed amplifier exhibits ≥164-GHz gain-bandwidth product with low power consumption (PC) of 71.2 mW. A 20/40-GHz-band frequency doubler achieves wideband performance (40%) with low PC (26 mW) by integrating a high-pass filter and a buffer amplifier (as a low-pass filter). A compact 40-GHz analog phase shifter, 20- and 40-GHz-band clock amplifiers with low PC are also realized. Second, a familiar concept in microwave-circuit design is applied to a high-speed digital circuit. A new approach -- inserting impedance-transformer circuits -- to enable 'impedance matching' in digital ICs is successfully applied to a 40-Gbps decision circuit to prevent unwanted gain peaking and jitter increase caused by transmission lines without sacrificing chip size.