A SiGe BiCMOS VCO IC with Highly Linear Kvco for 5-GHz-Band Wireless LANs

Satoshi KURACHI  Toshihiko YOSHIMASU  Haiwen LIU  Nobuyuki ITOH  Koji YONEMURA  

IEICE TRANSACTIONS on Electronics   Vol.E90-C    No.6    pp.1228-1233
Publication Date: 2007/06/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.6.1228
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuits and Related SoC Integration Technologies)
SiGe,  VCO,  resonant circuit,  VCO gain,  5-GHz-band,  WLAN,  

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A 5-GHz-band highly linear frequency tuning voltage-controlled oscillator (VCO) using 0.35 µm SiGe BiCMOS technology is presented. The highly linear VCO has a novel resonant circuit that includes two spiral inductors, p-n junction diode varactor units and a voltage-level- shift circuit. The fabricated VCO exhibits a VCO gain from 224 to 341 MHz/V, giving a Kvco ratio of 1.5, which is less than one-half of that of a conventional VCO. The measured phase noise is -116 dBc/Hz at 1 MHz offset at an oscillation frequency of 5.5 GHz. The tuning range is from 5.45 to 5.95 GHz. The dc current consumption is 3.4 mA at a supply voltage of 3.0 V.