Gate-Extension Overlap Control by Sb Tilt Implantation

Kentaro SHIBAHARA  Nobuhide MAEDA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E90-C   No.5   pp.973-977
Publication Date: 2007/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.5.973
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Junction Formation and TFT Reliability
Keyword: 
MOSFET,  extension,  gate,  overlap,  tilt implantation,  Sb,  

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Summary: 
Antimony tilt implantation has been utilized for source and drain extension formation of n-MOSFETs. The tilt implantation is a very convenient method to provide adequate overlap between the extensions and a gate electrode. MOSFET drive current was effectively improved by the tilt implantation without degrading short channel effects.