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Gate-Extension Overlap Control by Sb Tilt Implantation
Kentaro SHIBAHARA Nobuhide MAEDA
IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Junction Formation and TFT Reliability
MOSFET, extension, gate, overlap, tilt implantation, Sb,
Full Text: PDF(533KB)>>
Antimony tilt implantation has been utilized for source and drain extension formation of n-MOSFETs. The tilt implantation is a very convenient method to provide adequate overlap between the extensions and a gate electrode. MOSFET drive current was effectively improved by the tilt implantation without degrading short channel effects.