Possibility of Terahertz Injection-Locked Oscillation in an InGaP/InGaAs/GaAs Two-Dimensional Plasmon-Resonant Photomixer

Mitsuhiro HANABE  Yahya Moubarak MEZIANI  Taiichi OTSUJI  Eiichi SANO  Tanemasa ASANO  

IEICE TRANSACTIONS on Electronics   Vol.E90-C   No.5   pp.949-954
Publication Date: 2007/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.5.949
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
terahertz,  plasmon resonance,  plasma instability,  heterostructure,  high-electron-mobility transistor (HEMT),  

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We experimentally investigated terahertz photomixing operation at room temperature in an InGaP/InGaAs/ GaAs two-dimensional plasmon-resonant photomixer incorporating grating-bicoupled dual-gate structure. Photoelectrons drifting into a high-density plasmon cavity grating from an adjacent low-density one extensively excite the plasmon resonance, resulting in emission of terahertz radiation. A vertical cavity formed between the two-dimensional plasmon grating plane and an indium-tin-oxide mirror at the back surface gains the radiation. Self-oscillation initially at around 4.5 THz excited by a dc-photo carrier component was reinforced by the photomixed differential-frequency excitation at 4.0 and 5.0 THz. This indicates a possibility of injection-locked oscillation of the photomixer in the terahertz frequency band.