Transfer and Detection of Single Electrons Using Metal-Oxide-Semiconductor Field-Effect Transistors

Wancheng ZHANG  Katsuhiko NISHIGUCHI  Yukinori ONO  Akira FUJIWARA  Hiroshi YAMAGUCHI  Hiroshi INOKAWA  Yasuo TAKAHASHI  Nan-Jian WU  

IEICE TRANSACTIONS on Electronics   Vol.E90-C   No.5   pp.943-948
Publication Date: 2007/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.5.943
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Emerging Devices
single-electron,  MOSFET,  turnstile,  single-electron detection,  

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A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect transistors (MOSFETs) alternately, allows current quantization at 20 K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.