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High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations
Akio WAKEJIMA Kohji MATSUNAGA Yuji ANDO Tatsuo NAKAYAMA Yasuhiro OKAMOTO Kazuki OTA Naotaka KURODA Masahiro TANOMURA Hironobu MIYAMOTO
IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
GaN-FET, amplifier, memory effects, baseband impedance, digital predistortion, W-CDMA,
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This paper describes a high power GaN-FET amplifier which is developed for wideband code division multiple access (W-CDMA) base stations. We design a bias network which is symmetrically arranged to the RF line (two way bias network) in order to reduce impedance at a baseband frequency of the multi-carrier W-CDMA signal. As a result, the amplifier with the two way bias network successfully suppressed memory effects. Therefore, the application of a DPD technique to the GaN-FET amplifier with the two way bias network demonstrates almost 20 dB linearity improvement in IM3 and considerable improvement in higher order IMD, resulting in low IMD of less than -50 dBc at the highest ever reported W-CDMA average output power of 76 W.