High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station

Kouji ISHIKURA  Isao TAKENAKA  Hidemasa TAKAHASHI  Kouichi HASEGAWA  Kazunori ASANO  Naotaka IWATA  

IEICE TRANSACTIONS on Electronics   Vol.E90-C    No.5    pp.923-928
Publication Date: 2007/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.5.923
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
heterojunction FETs,  high-voltage operation,  power amplifiers,  field-modulating-plate,  

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This report presents Dual Field-modulating-Plates (Dual-FP) technology for a 28 V operated high power GaAs heterojunction FET (HJFET) amplifier. A developed HJFET has two FP electrodes; the 1st-FP is connected to the gate and the 2nd-FP to the ground. The 2nd-FP suppresses the drain current dispersion effectively cooperating with the 1st-FP, and it can also reduce the gate-drain parasitic capacitance. The developed push-pull amplifier, with four Dual-FPFET chips, demonstrated 55.1 dBm (320 W) output power with a 14.0 dB linear gain and a drain efficiency of 62% at 2.14 GHz. Under two-carrier W-CDMA signals, it showed a high drain efficiency of 30% and low third-order Inter-modulation distortion of -37 dBc at output power of 47.5 dBm.