Fabrication of a Monolithically Integrated WDM Channel Selector Using Single Step Selective Area MOVPE and Its Characterization

Abdullah AL AMIN
Tomonari SHIODA
Yoshiaki NAKANO

IEICE TRANSACTIONS on Electronics   Vol.E90-C    No.5    pp.1124-1128
Publication Date: 2007/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.5.1124
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Advances in Integrated Photonic Devices)
Category: Semiconductor Devices
WDM channel selector,  selective area MOVPE,  photonic integrated circuit,  InGaAsP quantum well,  semiconductor optical amplifier,  

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An 8ch, 400 GHz monolithically integrated WDM channel selector featuring an array of quantum well semiconductor optical amplifiers (SOA) and arrayed waveguidegrating demultiplexer is presented. Reduction of fabrication complexity was achieved by using a single step selective area MOVPE to realize the different bandgap profiles for the SOA array and passive region. The selective growth mask dimensions were optimized by simulation. Dry-etching with short bending radii of 200 µm resulted in compact device size of 7 mm2.5 mm. Static channel selection with high ON-OFF ratio of >40 dB was achieved.