Design and Fabrication of 40 Gbps-NRZ SOA-MZI All-Optical Wavelength Converters with Submicron-Width Bulk InGaAsP Active Waveguides

Yasunori MIYAZAKI  Kazuhisa TAKAGI  Keisuke MATSUMOTO  Toshiharu MIYAHARA  Tatsuo HATTA  Satoshi NISHIKAWA  Toshitaka AOYAGI  Kuniaki MOTOSHIMA  

Publication
IEICE TRANSACTIONS on Electronics   Vol.E90-C   No.5   pp.1118-1123
Publication Date: 2007/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.5.1118
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Advances in Integrated Photonic Devices)
Category: Semiconductor Devices
Keyword: 
wavelength converter,  semiconductor optical amplifier,  Mach-Zehnder interferometer,  laser diode,  40 Gbps,  

Full Text: PDF>>
Buy this Article




Summary: 
The design aspects of the bulk InGaAsP semiconductor optical amplifier integrated Mach-Zehnder interferometer (SOA-MZI) optimized for 40 Gbps-NRZ all optical wavelength conversion are described. The dimensions of the SOA active waveguide have been optimized for fast gain recovery by maximizing the gain and adjusting the wavelength-converted NRZ waveforms. Submicron-width buried heterostructure (BH) SOA waveguides were fabricated successfully and showed little leakage current. The experimental wavelength-converted optical waveform agreed well to the numerical simulations, and mask-compliant 40 G-NRZ wavelength-converted waveform was obtained by the optimized SOA-MZI. 40 G-NRZ full C-band operation and polarization-insensitive operation of SOA-MZI were also achieved.