Four Channel Ridge DFB Laser Array for 1.55 µm CWDM Systems by Wide-Stripe Selective Area MOVPE

Jesse DARJA  Melvin J. CHAN  Shu-Rong WANG  Masakazu SUGIYAMA  Yoshiaki NAKANO  

IEICE TRANSACTIONS on Electronics   Vol.E90-C   No.5   pp.1111-1117
Publication Date: 2007/05/01
Online ISSN: 1745-1353
DOI: 10.1093/ietele/e90-c.5.1111
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Advances in Integrated Photonic Devices)
Category: Semiconductor Devices
distributed feedback laser,  laser array,  coarse wavelength division multiplexing (CWDM),  MOVPE selective area growth,  

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Monolithically integrated four-channel distributed feedback (DFB) laser array has been fabricated by metal organic vapor phase epitaxy (MOVPE) selective area growth for 1.55 µm coarse-wavelength division multiplexing (CWDM) systems. Wide-stripe MOVPE selective area growth and electron-beam lithography are used to obtain wide CWDM channel spacing of 20 nm. Compared to hybrid integration of discrete lasers, monolithic integration of laser array on a single substrate greatly simplifies device alignment and packaging process.