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Four Channel Ridge DFB Laser Array for 1.55 µm CWDM Systems by Wide-Stripe Selective Area MOVPE
Jesse DARJA Melvin J. CHAN Shu-Rong WANG Masakazu SUGIYAMA Yoshiaki NAKANO
IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Online ISSN: 1745-1353
Print ISSN: 0916-8516
Type of Manuscript: Special Section PAPER (Special Section on Recent Advances in Integrated Photonic Devices)
Category: Semiconductor Devices
distributed feedback laser, laser array, coarse wavelength division multiplexing (CWDM), MOVPE selective area growth,
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Monolithically integrated four-channel distributed feedback (DFB) laser array has been fabricated by metal organic vapor phase epitaxy (MOVPE) selective area growth for 1.55 µm coarse-wavelength division multiplexing (CWDM) systems. Wide-stripe MOVPE selective area growth and electron-beam lithography are used to obtain wide CWDM channel spacing of 20 nm. Compared to hybrid integration of discrete lasers, monolithic integration of laser array on a single substrate greatly simplifies device alignment and packaging process.